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Preliminary Technical Information
TrenchT2 TM HiperFET
Power MOSFET
IXFH110N15T2
V DSS
I D25
R DS(on)
= 150V
= 110A
≤ 13m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-247
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 175 ° C
150
V
V DGR
V GSS
V GSM
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
150
± 20
± 30
V
V
V
G
D
S
(TAB)
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
110
300
55
800
A
A
A
mJ
G = Gate
S = Source
D = Drain
TAB = Drain
dV/dt
P D
T J
T JM
T stg
T L
T sold
Weight
I S ≤ I DM ,, V DD ≤ V DSS ,T J ≤ 175 ° C
T C = 25 ° C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
15
480
-55 ... +175
175
-55 ... +175
300
260
6
V/ns
W
° C
° C
° C
° C
° C
g
Features
International standard package
175°C Operating Temperature
High current handling capability
Fast intrinsic Rectifier
Dynamic dV/dt rated
Low R DS(on)
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications
BV DSS
V GS(th)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
150
2.5
4.5
V
V
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
I GSS
I DSS
V GS = ± 20V, V DS = 0V
V DS = V DSS
± 200 nA
25 μ A
power supplies
DC choppers
AC motor drives
V GS = 0V
T J = 150 ° C
500 μ A
Uninterruptible power supplies
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Notes 1, 2
13 m Ω
High speed power switching
applications
? 2008 IXYS CORPORATION, All rights reserved
DS100094(12/08)
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